JANTXV2N3810

JANTXV2N3810概述

TO-78 PNP 60V 0.05A

Bipolar BJT Transistor Array 2 PNP Dual 60V 50mA 350mW Through Hole TO-78-6


艾睿:
The three terminals of this PNP JANTXV2N3810 GP BJT from Microsemi give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 350 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.


JANTXV2N3810数据文档
型号 品牌 下载
JANTXV2N3810

Microsemi 美高森美

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JANTX2N2905A

Microsemi 美高森美

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Microsemi 美高森美

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JANTX2N2920

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JANTX1N5305-1

Microsemi 美高森美

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JANTX2N3019

Microsemi 美高森美

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JANTX1N5310-1

Microsemi 美高森美

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JANTX2N3019S

Microsemi 美高森美

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JANTX1N5314-1

Microsemi 美高森美

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JANTX1N5312UR-1

Microsemi 美高森美

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JANTX1N5314UR-1

Microsemi 美高森美

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