30 A - 600 V - 超高速IGBT 30 A - 600 V - ultra fast IGBT
The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 200000 mW. It has a maximum collector emitter voltage of 600 V. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGB30NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB10NB40LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB10NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB30NC60KT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20NB41LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB40V60F | ST Microelectronics 意法半导体 | 下载 |
| STGB19NC60WT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB20V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGB20NB37LZT4 | ST Microelectronics 意法半导体 | 下载 |
| STGB18N40LZT4 | ST Microelectronics 意法半导体 | 下载 |