IPD80R2K8CE数据手册PDF_IPD80R2K8CE中文资料-锐单商城

IPD80R2K8CE概述

800V,1.9A,N沟道功率MOSFET

Summary of Features:

.: Low specific on-state resistance R DSon*A

.: Very low energy storage in output capacitance E oss @ 400V

.: Low gate charge Q g

.: Field-proven CoolMOS™ quality

.: CoolMOS™ technology has been manufactured by since 1998

Benefits:

.: High efficiency and power density

.: Outstanding price/performance

.: High reliability

.: Ease-of-use

Target Applications:

.: LED lighting

IPD80R2K8CE详细参数

IPD80R2K8CE数据文档

型号	品牌	下载
IPD80R2K8CE	Infineon 英飞凌	下载
IPD800N06NGBTMA1	Infineon 英飞凌	下载
IPD80R2K8CEATMA1	Infineon 英飞凌	下载
IPD85P04P407ATMA1	Infineon 英飞凌	下载
IPD85P04P4L06ATMA1	Infineon 英飞凌	下载
IPD80R1K0CEATMA1	Infineon 英飞凌	下载
IPD80R1K4CEATMA1	Infineon 英飞凌	下载
IPD80N04S3-06	Infineon 英飞凌	下载
IPD80N04S306ATMA1	Infineon 英飞凌	下载
IPD80R1K4CEBTMA1	Infineon 英飞凌	下载
IPD80P03P4L07ATMA1	Infineon 英飞凌	下载