IPD127N06LGBTMA1

DPAK N-CH 60V 50A

表面贴装型 N 通道 60 V 50A（Tc） 136W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 60V 50A TO252-3

艾睿:
Amplify electronic signals and switch between them with the help of Infineon Technologies&s; IPD127N06LGBTMA1 power MOSFET. Its maximum power dissipation is 136000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology.

安富利:
Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R

Verical:
Trans MOSFET N-CH 60V 50A 3-Pin2+Tab DPAK T/R

Win Source:
MOSFET N-CH 60V 50A TO-252