高压Trench MOS势垒肖特基整流器 High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package
• Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 for TO-220AB, ITO-220AB, and TO-262AA package
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
| 型号 | 品牌 | 下载 |
|---|---|---|
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| V20120S-E3/4W | Vishay Semiconductor 威世 | 下载 |
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| V20100SG-M3/4W | Vishay Semiconductor 威世 | 下载 |
| V20120SG-E3/4W | Vishay Semiconductor 威世 | 下载 |
| V20100S-M3/4W | Vishay Semiconductor 威世 | 下载 |
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| V20120SGHM3/4W | Vishay Semiconductor 威世 | 下载 |
| V20150SG-M3/4W | Vishay Semiconductor 威世 | 下载 |