LQA10N200C

LQA10N200C概述

快速/超快二极管, Qspeed, 200 V, 10 A, 共阴极, 1.1 V, 13.9 ns, 60 A

General Description

This device has the lowest QRR of any 200 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers.

Applications

● AC/DC and DC/DC output rectification

   ● Output and freewheeling diodes

● Motor drive circuits

● DC-AC inverters

Features

● Low QRR, Low IRRM, Low tRR

● High dIF/dt capable 1000A/s

● Soft recovery

Benefits

● Increases efficiency

● Eliminates need for snubber circuits

● Reduces EMI filter component size and count

● Enables extremely fast switching

LQA10N200C数据文档
型号 品牌 下载
LQA10N200C

Power Integrations 帕沃英蒂格盛

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LQA10T200C

Power Integrations 帕沃英蒂格盛

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LQA12T300C

Power Integrations 帕沃英蒂格盛

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LQA10N150C

Power Integrations 帕沃英蒂格盛

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LQA10T150C

Power Integrations 帕沃英蒂格盛

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LQA12B300C

Power Integrations 帕沃英蒂格盛

下载
LQA16T300

Power Integrations 帕沃英蒂格盛

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LQA10T300

Power Integrations 帕沃英蒂格盛

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