BF1204

BF1204概述

双N沟道双栅MOS -FET Dual N-channel dual gate MOS-FET

DESCRIPTION

The is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package.

FEATURES

• Two low noise gain controlled amplifiers in a single package

• Superior cross-modulation performance during AGC

• High forward transfer admittance

• High forward transfer admittance to input capacitance ratio.

APPLICATIONS

•  Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.

BF1204数据文档
型号 品牌 下载
BF1204

NXP 恩智浦

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BF1206,115

NXP 恩智浦

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BF1205,115

NXP 恩智浦

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BF1211WR,115

NXP 恩智浦

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BF1205,135

NXP 恩智浦

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BF1202,215

NXP 恩智浦

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BF1208D,115

NXP 恩智浦

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BF1218,115

NXP 恩智浦

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BF1217WR,115

NXP 恩智浦

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BF1214,115

NXP 恩智浦

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BF1204,115

NXP 恩智浦

下载

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