双N沟道双栅MOS -FET Dual N-channel dual gate MOS-FET
DESCRIPTION
The is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package.
FEATURES
• Two low noise gain controlled amplifiers in a single package
• Superior cross-modulation performance during AGC
• High forward transfer admittance
• High forward transfer admittance to input capacitance ratio.
APPLICATIONS
• Gain controlled low noise amplifiers for VHF and UHF applications with 3 to 9 V supply voltage, such as digital and analog television tuners and professional communications equipment.
型号 | 品牌 | 下载 |
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BF1204 | NXP 恩智浦 | 下载 |
BF1206,115 | NXP 恩智浦 | 下载 |
BF1205,115 | NXP 恩智浦 | 下载 |
BF1211WR,115 | NXP 恩智浦 | 下载 |
BF1205,135 | NXP 恩智浦 | 下载 |
BF1202,215 | NXP 恩智浦 | 下载 |
BF1208D,115 | NXP 恩智浦 | 下载 |
BF1218,115 | NXP 恩智浦 | 下载 |
BF1217WR,115 | NXP 恩智浦 | 下载 |
BF1214,115 | NXP 恩智浦 | 下载 |
BF1204,115 | NXP 恩智浦 | 下载 |