IPB123N10N3GATMA1

INFINEON  IPB123N10N3GATMA1  晶体管, MOSFET, N沟道, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V

OptiMOS™3 功率 MOSFET，100V 及以上

得捷:
MOSFET N-CH 100V 58A D2PAK

欧时:
Infineon OptiMOS 3 系列 Si N沟道 MOSFET IPB123N10N3GATMA1, 58 A, Vds=100 V, 3引脚 D2PAK TO-263封装

贸泽:
MOSFET N-Ch 100V 58A D2PAK-2 OptiMOS 3

e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 58 A, 0.0107 ohm, TO-263, 表面安装

艾睿:
Do you require the advantages of traditional transistors coupled with the switching benefits of power MOSFETs? Infineon Technologies&s; IPB123N10N3GATMA1 power MOSFET can provide a solution. Its maximum power dissipation is 94000 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes optimos technology. This N channel MOSFET transistor operates in enhancement mode.

TME:
Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3

Verical:
Trans MOSFET N-CH 100V 58A Automotive 3-Pin2+Tab D2PAK T/R

Newark:
# INFINEON  IPB123N10N3GATMA1  MOSFET Transistor, N Channel, 58 A, 100 V, 0.0107 ohm, 10 V, 2.7 V

力源芯城:
100V,58A,12.3mΩ,N沟道功率MOSFET