功率半导体功率模块 Power Semiconductors Power Modules
This powerful and secure IGBT transistor from will make sure your circuit works properly. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 417000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
型号 | 品牌 | 下载 |
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APT25GP120BDQ1G | Microsemi 美高森美 | 下载 |
APT20GF120BRDQ1G | Microsemi 美高森美 | 下载 |
APT200GN60JDQ4G | Microsemi 美高森美 | 下载 |
APT200GN60JG | Microsemi 美高森美 | 下载 |
APT20GN60BG | Microsemi 美高森美 | 下载 |
APT20GN60BDQ1G | Microsemi 美高森美 | 下载 |
APT20F50S | Microsemi 美高森美 | 下载 |
APT24F50B | Microsemi 美高森美 | 下载 |
APT20GT60BRG | Microsemi 美高森美 | 下载 |
APT25GR120B | Microsemi 美高森美 | 下载 |
APT23F60B | Microsemi 美高森美 | 下载 |