BS62LV256SCG70

BSI BRILLIANCE SEMICONDUCTOR  BS62LV256SCG70  存储芯片, SRAM, 32KX8, 3-5V, CMOS, 70NS, 28SOP

DESCRIPTION

TheBS62L V256 is a high performance,very low power CMOS Static Random  Access  Memory  organized  as  32,768  by  8  bits  and operates form a wide range of 2.4V to 5.5V supply voltage.

Advanced  CMOS  technology  and  circuit  techniques  provide  both high  speed  and  low  power  features  with  typical  CMOS  standby current  of  0.01uA  and  maximum  access  time  of  70ns  in  3.0V operation.

FEATURES

Wide VCC operation voltage : 2.4V ~ 5.5V

Very low powerconsumption:

    VCC = 3.0V  Operationcurrent :  25mA Max.  at 70ns

                                               1mA Max.  at 1MHz

                     Standby current :  0.01uATyp. at 25OC

   VCC = 5.0V  Operationcurrent :  40mA Max.  at 55ns

                                              2mA Max.  at 1MHz

                     Standby current :  0.4uA Typ.  at 25OC

Highspeed access time:

  -55  55nsMax. at VCC: 4.5~5.5V

  -70  70nsMax. at VCC: 3.0~5.5V

Automatic power down whenchip is deselected

Easy expansion with CE and OE options

Threestate outputs and TTLcompatible

Fully static operation

Data retentionsupply voltage as low as 1.5V