APT150GNxx 系列 1200 V 215 A 55 ns 底座安装 IGBT - ISOTOP
You can use this IGBT transistor from as an electronic switch. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 625000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single dual emitter configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT150GN120JDQ4 | Microsemi 美高森美 | 下载 |
| APT100GT120JU2 | Microsemi 美高森美 | 下载 |
| APT15GN120KG | Microsemi 美高森美 | 下载 |
| APT11GF120BRDQ1G | Microsemi 美高森美 | 下载 |
| APT15GT60KRG | Microsemi 美高森美 | 下载 |
| APT15D100KG | Microsemi 美高森美 | 下载 |
| APT15D60KG | Microsemi 美高森美 | 下载 |
| APT15DQ100KG | Microsemi 美高森美 | 下载 |
| APT15D60K | Microsemi 美高森美 | 下载 |
| APT15DQ120KG | Microsemi 美高森美 | 下载 |
| APT15DQ60BG | Microsemi 美高森美 | 下载 |