N沟道PowerTrench MOSFET的30V ， 20A ， 4.0mohm N-Channel PowerTrench MOSFET 30V, 20A, 4.0mohm
General Description
This N-Channel MOSFET isproduced using Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
Features
Max rDSon =4.0mΩat VGS = 10V, ID= 20A
Max rDSon =4.9mΩat VGS = 4.5V, ID=18A
HBM ESD protection level of 6.4kV typical note 3
High performance trench technology for extremely low rDSon
High power and current handling capability
RoHS compliant
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|---|---|---|
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| FDS8928A | Fairchild 飞兆/仙童 | 下载 |
| FDS8949 | Fairchild 飞兆/仙童 | 下载 |
| FDS8958A | Fairchild 飞兆/仙童 | 下载 |
| FDS8958A_F085 | Fairchild 飞兆/仙童 | 下载 |
| FDS8958B | Fairchild 飞兆/仙童 | 下载 |
| FDS8978 | Fairchild 飞兆/仙童 | 下载 |
| FDS8984 | Fairchild 飞兆/仙童 | 下载 |
| FDS8960C | Fairchild 飞兆/仙童 | 下载 |
| FDS8884 | Fairchild 飞兆/仙童 | 下载 |
| FDS8878 | Fairchild 飞兆/仙童 | 下载 |