TO-268 N-CH 300V 52A
Create an effective common drain amplifier using this power MOSFET from Ixys Corporation. Its maximum power dissipation is 360000 mW. This device is made with hiperfet technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
得捷:
MOSFET N-CH 300V 52A TO268
贸泽:
MOSFET 300V 52A
艾睿:
Trans MOSFET N-CH Si 300V 52A 3-Pin2+Tab TO-268
Verical:
Trans MOSFET N-CH Si 300V 52A 3-Pin2+Tab TO-268
Win Source:
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t Low Gate Charge and Capacitances
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXFT52N30Q | IXYS Semiconductor | 下载 |
| IXFT66N20Q | IXYS Semiconductor | 下载 |
| IXFT30N40Q | IXYS Semiconductor | 下载 |
| IXFT13N100 | IXYS Semiconductor | 下载 |
| IXFT80N10 | IXYS Semiconductor | 下载 |
| IXFT12N100Q | IXYS Semiconductor | 下载 |
| IXFT15N100 | IXYS Semiconductor | 下载 |
| IXFT15N100Q | IXYS Semiconductor | 下载 |
| IXFT36N50P | IXYS Semiconductor | 下载 |
| IXFT36N60P | IXYS Semiconductor | 下载 |
| IXFT24N90P | IXYS Semiconductor | 下载 |