TGF2022-06

RF Power Transistor, 0 to 20GHz, 800mW, 12.9dB, 12V, GaAs, 0.57 X 0.53 X 0.1mm, pHEMT

The TriQuint is a discrete 0.6 mm pHEMT which operates from DC to 20 GHz. The part is designed using TriQuint"s proven standard 0.35um power pHEMT production process. The TGF2022-06 typically provides greater than 28 dBm of saturated output power with power gain of 13 dB. The maximum power added efficiency is 58% which makes the TGF2022-06 appropriate for high efficiency applications. The TGF2022-06 is also ideally suited for point-to-point radio, high-reliability space and military applications. The part is lead-free and RoHS compliant and has a protective surface passivation layer providing environmental robustness.

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Frequency range: DC to 20 GHz * > 28 dBm nominal Psat * 58% maximum PAE * 36 dBm nominal OIP3 * 13 dB nominal power gain * Suitable for high reliability applications * 0.6 mm x 0.35 um Power pHEMT * Nominal bias Vd = 8 to 12V, Idq = 45 to 75 mA under RF drive, Id rises from 45 mA to 150 mA * Chip dimensions: 0.57 x 0.53 x 0.10 mm 0.022 x 0.021 x 0.004 in