BUL310FP

高压快速开关NPN功率晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION 

The is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

■ STMicroelectronics PREFERRED SALESTYPE

■ NPN TRANSISTOR

■ HIGH VOLTAGE CAPABILITY

■ LOW SPREAD OF DYNAMIC PARAMETERS

■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

■ VERY HIGH SWITCHING SPEED

■ FULLY CHARACTERIZED AT 125°C

■ LARGE RBSOA

■ FULLY MOLDED INSULATED PACKAGE

■ 2000 V DC INSULATION U.L. COMPLIANT