IPG16N10S461ATMA1

晶体管, MOSFET, N沟道, 16 A, 100 V, 0.053 ohm, 10 V, 2.8 V

* Dual N-channel Normal Level - Enhancement mode * AEC Q101 qualified * MSL1 up to 260°C peak reflow * 175°C operating temperature * Green Product RoHS compliant * 100% Avalanche tested

得捷:
MOSFET 2N-CH 100V 16A 8TDSON

欧时:
Infineon IPG16N10S461ATMA1

立创商城:
IPG16N10S461ATMA1

e络盟:
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.053 ohm, 10 V, 2.8 V

艾睿:
Create an effective common drain amplifier using this IPG16N10S461ATMA1 power MOSFET from Infineon Technologies. Its maximum power dissipation is 29000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This device utilizes optimos technology. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.

安富利:
Trans MOSFET N-CH 100V 16A 8-Pin TDSON T/R

Verical:
Trans MOSFET N-CH 100V 16A Automotive 8-Pin TDSON EP T/R