FDC8601

FAIRCHILD SEMICONDUCTOR  FDC8601.  场效应管, MOSFET, N沟道, 100V, 0.086Ω, 2.7A, SUPERSOT-6

The is a N-channel MOSFET produced using Semiconductor"s advanced PowerTrench® process. It is suitable for use in load switch, synchronous rectifier and primary switch applications.

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High performance Trench technology for extremely low RDS ON

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High power and current handling capability in a widely used surface-mount package

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Fast switching speed

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100% UIL tested