功率半导体功率模块射频功率MOSFET Power Semiconductors Power Modules RF Power MOSFETs
This fast-switching IGBT transistor from will be perfect in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 682000 mW. It is made in a single dual emitter configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT200GN60J | Microsemi 美高森美 | 下载 |
| APT20GF120BRDQ1G | Microsemi 美高森美 | 下载 |
| APT200GN60JDQ4G | Microsemi 美高森美 | 下载 |
| APT200GN60JG | Microsemi 美高森美 | 下载 |
| APT20GN60BG | Microsemi 美高森美 | 下载 |
| APT20GN60BDQ1G | Microsemi 美高森美 | 下载 |
| APT20F50S | Microsemi 美高森美 | 下载 |
| APT24F50B | Microsemi 美高森美 | 下载 |
| APT20GT60BRG | Microsemi 美高森美 | 下载 |
| APT25GR120B | Microsemi 美高森美 | 下载 |
| APT23F60B | Microsemi 美高森美 | 下载 |