互补硅功率晶体管 COMPLEMENTARY SILICON POWER TRANSISTORS
This specially engineered PNP GP BJT from STMicroelectronics comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| BD242B | ST Microelectronics 意法半导体 | 下载 |
| BD2425NNRF | Anaren 安伦 | 下载 |
| BD2425N100ATI | Anaren 安伦 | 下载 |
| BD2425P50100AHF | Anaren 安伦 | 下载 |
| BD2425N5050AHF | Anaren 安伦 | 下载 |
| BD2425N50ATI | Anaren 安伦 | 下载 |
| BD2425N50200AHF | Anaren 安伦 | 下载 |
| BD2425J50100AHF | Anaren 安伦 | 下载 |
| BD2425NCSR | Anaren 安伦 | 下载 |
| BD2425N50100AHF | Anaren 安伦 | 下载 |
| BD2425J5050AHF | Anaren 安伦 | 下载 |