STF817A

PNP中功率晶体管 PNP MEDIUM POWER TRANSISTOR

Bipolar BJT Transistor PNP 80V 1.5A 50MHz 1.4W Surface Mount SOT-89-3

得捷:
TRANS PNP 80V 1.5A SOT89-3

艾睿:
The three terminals of this PNP STF817A GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1400 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Chip1Stop:
Trans GP BJT PNP 80V 1.5A 4-Pin3+Tab SOT-89 T/R

Win Source:
TRANS PNP 80V 1.5A SOT89