IPB60R299CPATMA1

INFINEON  IPB60R299CPATMA1  功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.27 ohm, 10 V, 3 V

The IPB60R299CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. It is specially designed for hard switching SMPS topologies.

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Low figure-of-meritFOM RON x Qg

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Extreme dV/dt rated

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High peak current capability

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Qualified according to JEDEC for target applications

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Ultra low RDS ON

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Very fast switching

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Internal Rg very low

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High current capability

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Significant reduction of conduction and switching losses

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High power density and efficiency for superior power conversion systems

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Best-in-class performance ratio