Amplifier,728 to 960MHz, 46.8W, Typ Gain in dB is 30.7 @ 920MHz, 28V, LDMOS, SOT1722
Overview
The and A2I08H040GNR1 wideband integrated circuits are asymmetrical Doherty designed with on-chip matching that make them usable from 728 to 960 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
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## Features
* Advanced High Performance In-Package Doherty
* On-Chip Matching 50 Ohm Input, DC Blocked
* Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
* Designed for Digital Predistortion Error Correction Systems
* RoHS Compliant
## Features RF Performance Tables
### 900 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1A = 25 mA, IDQ2A = 105 mA, VGS1B = 2.65 Vdc, VGS2B = 2.3 Vdc, Pout = 9 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---
920 MHz| 30.7| 45.9| 8.5| –36.0
940 MHz| 30.6| 46.7| 8.4| –39.3
960 MHz| 30.4| 45.2| 8.1| –34.5
### 700 MHz
Typical Doherty Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ1A = 25 mA, IDQ2A = 105 mA, VGS1B = 2.65 Vdc, VGS2B = 2.3 Vdc, Pout = 9 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.\---|---|---|---|---
728 MHz| 29.1| 49.1| 7.9| –32.7
748 MHz| 28.8| 48.6| 7.8| –36.4
768 MHz| 28.5| 46.9| 7.8| –36.7
型号 | 品牌 | 下载 |
---|---|---|
A2I08H040NR1 | NXP 恩智浦 | 下载 |
A2I08H040GNR1 | NXP 恩智浦 | 下载 |
A2I09VD030NR1 | NXP 恩智浦 | 下载 |
A2I09VD030GNR1 | NXP 恩智浦 | 下载 |