EMF6 FET+BJT复合场效应管 30V -15V marking/标记 F6 SOT-563 电源管理电路
最大源漏极电压VdsDrain-Source Voltage| MOSFET N-Channel \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 30V 最大漏极电流IdDrain Current| 20V 源漏极导通电阻RdsDrain-Source On-State Resistance| 100mA/0.1A 开启电压Vgs（th）Gate-Source Threshold Voltage| 5Ω@ VGS = 4V, ID =10mA 耗散功率PdPower Dissipation| 20ms@VDS=3V，Id=10mA Description & Applications| 描述与应用| 0.8~1.5V
Win Source:
Power management dual transistors