TGF2023-2-10数据手册PDF_TGF2023-2-10中文资料-锐单商城

TGF2023-2-10概述

射频结栅场效应晶体管RF JFET晶体管 DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB

The TriQuint is a discrete 10 mm GaN on SiCHEMT which operates from DC to 18 GHz. The part is designed using TriQuint"s proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and efficiency at high drain bias operating conditions. The device typically provides 46.7 dBm of saturated output power with power gain of 17.8 dB at 3 GHz. The maximum power added efficiency is 55% which makes the TGF2023-2-10 appropriate for high efficiency applications. The part is lead-free and RoHS compliant.

.: Frequency range: DC to 18 GHz * 46.7 dBm nominal Psat at 3 GHz * 55% maximum PAE * 17.5 dB nominal power gain * Bias: Vd = 28 to 32 V, Idq = 1 A, Vg = -3.6 V typical * Technology: 0.25 um Power GaN on SiC * Chip dimensions: 0.82 x 2.48 x 0.10 mm

TGF2023-2-10详细参数

TGF2023-2-10数据文档

型号	品牌	下载
TGF2023-2-10	Qorvo	下载
TGF2953	Qorvo	下载
TGF2977-SM	Qorvo	下载
TGF2080	Qorvo	下载
TGF2952	Qorvo	下载
TGF2022-48	Qorvo	下载
TGF2022-06	Qorvo	下载
TGF2023-2-20	Qorvo	下载
TGF2023-2-02	Qorvo	下载
TGF2022-24	Qorvo	下载
TGF2957	Qorvo	下载