IGP30N65F5XKSA1

Trans IGBT Chip N-CH 650V 55A 188000mW 3Pin3+Tab TO-220 Tube

Summary of Features:

.

650V breakthrough voltage

.

Compared to ’s Best-in-class HighSpeed 3 family

.

Factor 2.5 lower Q g

.

Factor 2 reduction in switching losses

.

200mV reduction in V CEsat

.

Low C OES/E OSS

.

Mild positive temperature coefficient V CEsat

.

Temperature stability of V f

Benefits:

.

Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability

.

50V increase in the bus voltage possible without compromising reliability

.

Higher power density design

Target Applications:

  

.

Uninterruptible Power Supplies

.

Welding