INFINEON BSC750N10NDGATMA1 晶体管, MOSFET, N沟道, 13 A, 100 V, 62 mohm, 10 V, 3 V
OptiMOS™2 功率 MOSFET 系列
Infineon 得捷:
MOSFET 2N-CH 100V 3.2A 8TDSON
欧时:
Infineon OptiMOS 2 系列 双 Si N沟道 MOSFET BSC750N10NDGATMA1, 13 A, Vds=100 V, 8引脚 TDSON封装
贸泽:
MOSFET N-Ch 100V 13A TDSON-8 OptiMOS 2
e络盟:
功率场效应管, MOSFET, N沟道, 100 V, 13 A, 0.062 ohm, PG-TDSON, 表面安装
艾睿:
Use Infineon Technologies&s; BSC750N10NDGATMA1 power MOSFET to switch quickly between different electronic signals with ease. Its maximum power dissipation is 1500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes optimos technology.
安富利:
Trans MOSFET N-CH 100V 3.2A 8-Pin TDSON T/R
富昌:
BSC750N10ND 系列 100 V 75 mOhm N沟道 OptiMOS™2 功率 晶体管- PG-TDSON-8
TME:
Transistor: N-MOSFET; unipolar; 100V; 13A; 26W; PG-TDSON-8
Verical:
Trans MOSFET N-CH 100V 3.2A Automotive 8-Pin TDSON EP T/R
Newark:
# INFINEON BSC750N10NDGATMA1 MOSFET Transistor, N Channel, 13 A, 100 V, 62 mohm, 10 V, 3 V
型号 | 品牌 | 下载 |
---|---|---|
BSC750N10NDGATMA1 | Infineon 英飞凌 | 下载 |
BSC750N10ND G | Infineon 英飞凌 | 下载 |