SMMUN2114LT1G

SMMUN2114LT1G概述

数字晶体管( BRT ) R1 = 10千欧, R2 = 47 K· Digital Transistors BRT R1 = 10 k, R2 = 47 k

Thanks to "s PNP digital transistor, you can easily benefit from the characteristics of traditional BJT s while working with digital systems. This product"s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 400 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

SMMUN2114LT1G数据文档
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