2N6035G

ON SEMICONDUCTOR  2N6035G  双极性晶体管

The Power 4 A, 80 V NPN Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications.

Features

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High DC Current Gain -

hFE = 2000 Typ @ IC = 2.0 Adc

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Collector-Emitter Sustaining Voltage - @ 100 mAdc

VCEOsus = 60 Vdc Min - 2N6035, 2N6038

VCEOsus = 80 Vdc Min - 2N6036, 2N6039

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Forward Biased Second Breakdown Current Capability

IS/b = 1.5 Adc @ 25 Vdc

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Monolithic Construction with Built-in Base-Emitter

Resistors to Limit Leakage Multiplication

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Space-Saving High Performance-to-Cost Ratio

TO-225AA Plastic Package

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Pb-Free Packages are Available