FS215R04A1E3DBOMA1

FS215R04A1E3DBOMA1概述

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Summary of Features:

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Complete 3-phase Six-Pack with NTC in one compact module
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High efficient 400Vces Ultra Thin Wafer Trench-Field-Stop IGBT3 with matching 400V Emitter Controlled 3 diode.
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Increased diode current capability optimized for generator mode in hybrid electric vehicles
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25% reduced gate charge compared to IGBT3 650V reduces gate driver power losses
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Enhanced wire bonding
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Rugged Al 2O 3 ceramic for automotive applications with high thermal cycle requirements
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Copper base plate for optimized cooling

Benefits:

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High efficient system approach for DCL voltages up to 200V
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High reliability
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Same mounting as HybridPACK1 modules with 650V chipset modular approach
FS215R04A1E3DBOMA1数据文档
型号 品牌 下载
FS215R04A1E3DBOMA1

Infineon 英飞凌

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FS215R04A1E3D

Infineon 英飞凌

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