Trans IGBT Chip N-CH 600V 80A 260400mW 3Pin3+Tab TO-3P
This IGBT transistor from Renesas is an electronic switch that can handle large currents with very little gate current drive. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 260400 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with trench technology. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| RJH60F5DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60F7DPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH65D27BDPQ-A0#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A01RDPD-A0#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPD-A0#J2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60D1DPP-E0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60D2DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60V1BDPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60M1DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJH60A83RDPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |