IPL65R070C7AUMA1

晶体管, MOSFET, N沟道, 28 A, 650 V, 0.062 ohm, 10 V, 3.5 V

Summary of Features:

.

650V voltage

.

Revolutionary best-in-class R DSon/package

.

Reduced energy stored in output capacitance Eoss

.

Lower gate charge Qg

.

Space saving through use of smaller packages or reduction of parts

.

12 years manufacturing experience in superjunction technology

Benefits:

.

Improved safety margin and suitable for both SMPS and solar inverter applications

.

Lowest conduction losses/package

.

Low switching losses

.

Better light load efficiency

.

Increasing power density

.

Outstanding CoolMOS™ quality

Target Applications:

 

.

Telecom

.

Server

.

Solar

.

PC power