BST84 N沟道MOSFET 200V 250mA/0.25A SOT-89 marking/标记 KN 高密度电池设计极低的RDS/压控制小信号开关
最大源漏极电压Vds Drain-Source Voltage| 200V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 20V 最大漏极电流Id Drain Current| 250mA/0.25A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 6Ω/Ohm @250mA,10V 开启电压Vgs(th) Gate-Source Threshold Voltage| 0.8-2.8V 耗散功率Pd Power Dissipation| 1W Description & Applications| N-channel enhancement mode vertical D-MOS transistor • Direct interface to C-MOS, TTL,etc. • High-speed switching • No second breakdown 描述与应用| N沟道增强模式垂直D-MOS晶体管 •直接连接到C-MOS,TTL等 •高速开关 •无二次击穿
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N-channel enhancement mode vertical D-MOS transistor