PMGD780SN,115数据手册PDF_PMGD780SN,115中文资料-锐单商城

PMGD780SN,115概述

NXP PMGD780SN,115 双路场效应管, MOSFET, 双N沟道, 300 mA, 60 V, 0.78 ohm, 10 V, 2 V

The is a dual N-channel enhancement-mode FET in a surface-mount plastic package using TrenchMOS™ technology. It is suitable for driver circuits and switching in portable appliances applications. The device offers 40% smaller footprint.