VISHAY TSHG5510 红外发射器, 高速, 38 °, T-1 3/4 5mm, 100 mA, 1.45 V, 15 ns, 15 ns
The is a 830nm high speed Infrared Emitting Diode in GaAlAs double hetero DH technology with high radiant power, high speed and moulded in a clear. This diode is suitable for high pulse current operation.
| 型号 | 品牌 | 下载 |
|---|---|---|
| TSHG5510 | Vishay Semiconductor 威世 | 下载 |
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