DIODES INC. FZTA14TA 单晶体管 双极, 达林顿, NPN, 30 V, 170 MHz, 2 W, 1 A, 20000 hFE
The NPN Darlington transistor from Zetex is the perfect solution when amplified current gain values are needed. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 2@0.1mA@100mA|2.2@1mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 10000@10mA@5 V|20000@100mA@5V|5000@1A@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA|1.6@1mA@1A V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.