FF1000R17IE4DP_B2

IGBT 模块

Summary of Features:

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Extended Operation Temperature Ttvj op

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High DC Stability

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High Current Density

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Low Switching Losses

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Tvj op = 150°C

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Low Vcesat

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Enlarged Diode for regenerative operation

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Package with CTI > 400

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High Creepage and Clearance Distances

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High Power and Thermal Cycling Capability

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Copper Base Plate

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UL recognized

Benefits:

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High Power Density

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Standardized housing