JAN2N7371

PNP达林顿大功率硅晶体管 PNP DARLINGTON HIGH POWER SILICON TRANSISTOR

This high power PNP transistor is rated at 12 amps and is military qualified up to the JANTXV level for high reliability applications.  This TO-254AA low-profile design offers flexible mounting options.

艾睿:
Are you looking for an amplified current signal in your circuit? The PNP JAN2N7371 Darlington transistor from Microsemi yields a much higher gain than other transistors. This Darlington transistor array&s;s maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@120mA@12A V. This product&s;s maximum continuous DC collector current is 12 A, while its minimum DC current gain is 1000@6A@3 V|150@12A@3V. It has a maximum collector emitter saturation voltage of 3@120mA@12A V. Its maximum power dissipation is 100000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -55 °C to 125 °C.

Verical:
Trans Darlington PNP 100V 12A 100000mW 3-Pin3+Tab TO-254 Tray