BUL1203EFP

高压快速开关NPN功率晶体管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Bipolar BJT Transistor NPN 550V 5A 36W Through Hole TO-220-3

得捷:
TRANS NPN 550V 5A TO220-3

艾睿:
Design various electronic circuits with this versatile NPN BUL1203EFP GP BJT from STMicroelectronics. This bipolar junction transistor&s;s maximum emitter base voltage is 9 V. Its maximum power dissipation is 36000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 550 V and a maximum emitter base voltage of 9 V.

安富利:
Trans GP BJT NPN 550V 5A 3-Pin3+Tab TO-220FP Tube

Win Source:
TRANS NPN 550V 5A TO-220FP