BSP230数据手册PDF_BSP230中文资料-锐单商城

BSP230概述

NXP BSP230 晶体管, MOSFET, D-MOS, P沟道, -210 mA, -300 V, 17 ohm, -10 V, -2.8 V 新

最大源漏极电压VdsDrain-Source Voltage| -300V

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最大栅源极电压Vgs±Gate-Source Voltage| 20V

最大漏极电流IdDrain Current| -0.21A

源漏极导通电阻RdsDrain-Source On-State Resistance| 17Ω @-170mA,-10V

开启电压Vgs（th）Gate-Source Threshold Voltage| -1.7--2.55V

耗散功率PdPower Dissipation| 1.5W

Description & Applications| FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.

描述与应用| •直接连接到C-MOS，TTL等 •高速开关 •无二次击穿

Newark:
# NXP BSP230 MOSFET, P-CH, -300V, -0.21A, SOT-223-3

Win Source:
P-channel enhancement mode vertical D-MOS transistor

BSP230数据文档