K4S560832E-UC75

16M x 4Bit x 4 Banks / 8M x 8Bit x 4 Banks / 4M x 16Bit x 4 Banks SDRAM

GENERAL DESCRIPTION

The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / 4 x 4,196,304 words by 4bits, fabricated with SAMSUNG"s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

• JEDEC standard 3.3V power supply

• LVTTL compatible with multiplexed address

• Four banks operation

• MRS cycle with address key programs

-. CAS latency 2 & 3

-. Burst length 1, 2, 4, 8 & Full page

-. Burst type Sequential & Interleave

• All inputs are sampled at the positive going edge of the system clock.

• Burst read single-bit write operation

• DQM x4,x8 & LUDQM x16 for masking

• Auto & self refresh

• 64ms refresh period 8K Cycle

• 54 TSOPII Pb-free Package

• RoHS compliant