SI7898DP-T1-GE3数据手册PDF_SI7898DP-T1-GE3中文资料-锐单商城

SI7898DP-T1-GE3概述

VISHAY SI7898DP-T1-GE3 晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V

The is a 150VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC power supply primary side switch and industrial motor driver applications.

.: New low thermal resistance PowerPAK® package with small size and low 1.07mm profile

.: PWM optimized

.: Fast switching

.: 100% Rg tested

.: Halogen-free

.: -55 to 150°C Operating temperature range

SI7898DP-T1-GE3替代型号

SI7898DP-T1-GE3详细参数

SI7898DP-T1-GE3数据文档

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