NXP PBSS8110Z 单晶体管 双极, NPN, 100 V, 650 mW, 1 A, 150 hFE
The is a 1A NPN breakthrough-in small signal BISS Transistor in a surface-mount plastic package with increased heat-sink.
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Low collector-emitter saturation voltage VCEsat
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High collector current capability IC and ICM
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High collector current gain hFE at high IC
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High efficiency due to less heat generation
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Smaller required printed-circuit board PCB area than for conventional transistors
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PNP complement is PBSS9110Z
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PB8110 Marking code