IXFT6N100Q

IXFT6N100Q概述

TO-268 N-CH 1000V 6A

Increase the current or voltage in your circuit with this power MOSFET from Ixys Corporation. Its maximum power dissipation is 180000 mW. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology.


得捷:
MOSFET N-CH 1000V 6A TO268


艾睿:
Trans MOSFET N-CH 1KV 6A 3-Pin2+Tab TO-268


IXFT6N100Q数据文档
型号 品牌 下载
IXFT6N100Q

IXYS Semiconductor

下载
IXFT66N20Q

IXYS Semiconductor

下载
IXFT30N40Q

IXYS Semiconductor

下载
IXFT13N100

IXYS Semiconductor

下载
IXFT80N10

IXYS Semiconductor

下载
IXFT12N100Q

IXYS Semiconductor

下载
IXFT15N100

IXYS Semiconductor

下载
IXFT15N100Q

IXYS Semiconductor

下载
IXFT36N50P

IXYS Semiconductor

下载
IXFT36N60P

IXYS Semiconductor

下载
IXFT24N90P

IXYS Semiconductor

下载

锐单商城 - 一站式电子元器件采购平台