S34MS04G100BHI000

SPANSION  S34MS04G100BHI000  闪存, 与非, 4 Gbit, 64M x 8位, 并行, BGA, 63 引脚

The is a 4GB SLC NAND Flash Memory for embedded. It is offered in 1.8VCC and VCCQ power supply and with x8 I/O interface. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The page size for x8 2048 + 64 spare bytes. Each block can be programmed and erased up to 100000 cycles with ECC error correction code on. To extend the lifetime of NAND flash devices, the implementation of an ECC is mandatory. The chip supports CE# don"t care function. This function allows the direct download of the code from the NAND flash memory device by a microcontroller, since the CE# transitions do not stop the read operation. The device has a read cache feature that improves the read throughput for large files. During cache reading, the devices load the data in a cache register while the previous data is transferred to the I/O buffers to be read.

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Architecture - Input/output bus width of 16-bit

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Open NAND flash interface ONFI 1.0 compliant

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Address, data and commands multiplexed

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Security - One time programmable OTP area

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Hardware program/erase disabled during power transition

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Support multiplane program and erase commands

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Supports copy back program

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Support multiplane copy back program

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Supports read cache

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Electronic signature - Manufacturer 1Ch, 00h

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10 Years data retention typical

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Blocks zero and one are valid and will be valid for at least 1000 program-erase cycles with ECC