DXT2013P5-13

Trans GP BJT PNP 100V 5A 3200mW Automotive 3Pin3+Tab PowerDI 5 T/R

- 双极 BJT - 单 PNP 100 V 5 A 125MHz 3.2 W 表面贴装型 PowerDI™ 5

立创商城:
PNP 100V 5A

得捷:
TRANS PNP 100V 5A POWERDI5

艾睿:
Do you require a transistor in your circuit operating in the high-voltage range? This PNP DXT2013P5-13 general purpose bipolar junction transistor, developed by Diodes Zetex, is your solution. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3200 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.

安富利:
Trans GP BJT PNP 100V 5A 3-Pin2+Tab PowerDI 5 T/R

Chip1Stop:
Trans GP BJT PNP 100V 5A 3-Pin2+Tab PowerDI 5 T/R

Verical:
Trans GP BJT PNP 100V 5A Automotive 3-Pin2+Tab PowerDI 5 T/R

Win Source:
TRANS PNP 100V 5A POWERDI5

DeviceMart:
TRANS PNP 100V 5A POWERDI5