RF Switch SP2T 3GHz to 8GHz 19dB 8Pin QFN EP T/R
The is a pHEMT GaAs FET IC switch packaged in an 2 x 2 mm, 8-lead exposed pad plastic package for low-cost commercial applications. The use of the V BIAS line enables the part to be used with low control bias voltages down to 1.8 V. This switch is ideal for Ultra Wide Band UWB applications covering BG1 and BG3. For 3.3 V control, the V BIAS is not required and is left open circuit on the board.
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