IXGH36N60B3C1

IXGH36N60B3C1概述

Trans IGBT Chip N-CH 600V 75A 250000mW 3Pin3+Tab TO-247

IGBT PT 600 V 75 A 250 W 通孔 TO-247AD


得捷:
IGBT 600V 75A 250W TO247


艾睿:
This IXGH36N60B3C1 IGBT transistor from Ixys Corporation will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 250000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.


TME:
Transistor: IGBT; 600V; 36A; 250W; TO247-3


Verical:
Trans IGBT Chip N-CH 600V 75A 250000mW 3-Pin3+Tab TO-247


Win Source:
IGBT 600V 75A 250W TO247


IXGH36N60B3C1数据文档
型号 品牌 下载
IXGH36N60B3C1

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IXGH10N100AU1

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IXGH24N60B

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IXGH30N60BD1

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IXGH24N60C

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IXGH32N60C

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IXGH32N60CD1

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IXGH50N60B

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IXGH32N60B

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IXGH24N60A

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IXGH32N60BU1

IXYS Semiconductor

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