VND3NV04-E

VND3NV04-E概述

VND3NV04 单通道 低边 自保护 6 V 7 A 120 mOhm 功率MOSFET - TO-252-3

Description

The VNN3NV04, VNS3NV04, VND3NV04 VND3NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Features

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

■ Low current drawn from input pin

■ Diagnostic feedback through input pin

■ ESD protection

■ Direct access to the gate of the Power MOSFET analog driving

■ Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive

VND3NV04-E数据文档
型号 品牌 下载
VND3NV04-E

ST Microelectronics 意法半导体

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VND3NV0413TR

ST Microelectronics 意法半导体

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VND3NV04-1

ST Microelectronics 意法半导体

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VND3NV04

ST Microelectronics 意法半导体

下载
VND3NV04-1-E

ST Microelectronics 意法半导体

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VND3NV04TR-E

ST Microelectronics 意法半导体

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