MTD9N10ET4 N沟道MOSFET 100V 9A TO-252/D-PAK marking/标记 高速开关/低导通电阻
Power MOSFET 9 Amps, 100 Volts N–Channel DPAK
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
•Avalanche Energy Specified
•Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
•Diode is Characterized for Use in Bridge Circuits
•IDSSand VDSonSpecified at Elevated Temperature
•Replaces MTD6N10