JANTX2N3421S

Trans GP BJT NPN 80V 3A 3Pin TO-39

This family of high-frequency, epitaxial planar transistors feature low saturation voltage.    These devices are also available in TO-5 and low profile U4 packages.  also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

艾睿:
If you require a general purpose BJT that can handle high voltages, then the NPN JANTX2N3421S BJT, developed by Microsemi, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 8 V. Its maximum power dissipation is 1000 mW. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

Verical:
Trans GP BJT NPN 80V 3A 1000mW 3-Pin TO-39 Bag